• 专利标题:   Graphene Schottky varactor diode for high-performance photodetection, comprises graphene channel that is formed on substrate, and Schottky contacts which form graphene Schottky varactor diode which is essentially free from dark currents.
  • 专利号:   WO2021019533-A1
  • 发明人:   NAVEH D, KIRSHNER M, LEVI A, TWITTO A
  • 专利权人:   UNIV BARILAN
  • 国际专利分类:   H01L029/10, H01L029/16, H01L029/93
  • 专利详细信息:   WO2021019533-A1 04 Feb 2021 H01L-029/93 202116 Pages: 31 English
  • 申请详细信息:   WO2021019533-A1 WOIL050831 27 Jul 2020
  • 优先权号:   US879471P

▎ 摘  要

NOVELTY - The graphene Schottky varactor diode comprises a graphene channel that is formed on a substrate, and Schottky contacts. The graphene Schottky varactor diode is essentially free from dark currents. The graphene Schottky varactor diode is adapted to rectify transfer curves with a voltage threshold of at least 0.1 volts, provide a photoresponse increase with modulation frequency, provide a photoresponse of pure graphene of at least 100 milliampere per watt, and provide a photoresponse independent from direct current bias. USE - Graphene Schottky varactor diode for high-performance photodetection. ADVANTAGE - The graphene Schottky varactor diode includes a low-gap semiconductor located under the graphene channel, which enhances the photoresponse of the diode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a process for preparing a graphene Schottky varactor diode. DESCRIPTION OF DRAWING(S) - The drawing shows the microscopic view of the transfer-length modulated graphene Schottky varactor diodes.