▎ 摘　　要

NOVELTY - The method involves sequentially forming seed layer and protection layer on substrate (20). The protection layer and seed layer are patterned to form protection patterns (23,25) and seed patterns (22a,22b) with respective lengths in respective directions. Length is lesser than other length. USE - Method of forming graphene device (claimed). ADVANTAGE - The graphene layer can be directly applied to the device without use of any separation process and transferring process of graphene layer. The graphene device can be formed with simple manufacturing process. Sine the transferring process is omitted, the fabrication process of graphene layer can be simplified, and hence the damage to the graphene layer can be prevented. Since the electrical conductivity of the graphene layer is achieved, the performance and the reliable electronic device of graphene layer can be improved effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene device. Substrate (20) Insulation layer (21) Seed patterns (22a,22b) Protection patterns (23,25) Graphene layer (24)