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  • 专利标题:   Method of producing semiconductor graphene , includes using a graphite workpiece, exposing the entire surface of the workpiece to a stream of slow neutrons.
  • 专利号:   RU2544266-C2, RU2013122597-A
  • 发明人:   PLEKHANOV V G, ZHURAVLEVA L M
  • 专利权人:   UNIV MOSC RAILWAY TRANSPORT, UNIV MOSC RAILWAY TRANSPORT
  • 国际专利分类:   B82B003/00, H01L021/261
  • 专利详细信息:   RU2544266-C2 20 Mar 2015 H01L-021/261 201530 Russian
  • 申请详细信息:   RU2544266-C2 RU122597 17 May 2013
  • 优先权号:   RU122597

▎ 摘　　要

NOVELTY - Method of producing semiconductor graphene comprises using a graphite workpiece, exposing the entire surface of the workpiece to a stream of slow neutrons, mechanical treatment of the workpiece to separate atomic layers of graphite with a given concentration of the 13C isotope which determines the band-gap. USE - Chemistry. ADVANTAGE - Achieving a specific concentration of the 13C isotope, which enables to open the band-gap by tens of meV.3 dwg