▎ 摘　　要

NOVELTY - The method comprises depositing a metal layer over a silicon carbide substrate (10), and performing, at a first temperature of 810-900 degrees C, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and an electrically neutral graphene layer (20) on the silicon carbide substrate. The composite layer includes a metal. The method further comprises performing a second heat treatment on the silicon carbide substrate at a second temperature of 910-1000 degrees C before depositing the metal layer. USE - The method is useful for manufacturing a structure of a graphene device (claimed) that is useful for electrical devices including display device electrodes and solar cell electrodes. ADVANTAGE - The method is capable of manufacturing the structure with excellent transparency and conductivity. DETAILED DESCRIPTION - The method comprises depositing a metal layer over a silicon carbide substrate (10), and performing, at a first temperature of 810-900 degrees C, a first heat treatment on the silicon carbide substrate over which the metal layer is deposited to form a composite layer and an electrically neutral graphene layer (20) on the silicon carbide substrate. The composite layer includes a metal. The method further comprises performing a second heat treatment on the silicon carbide substrate at a second temperature of 910-1000 degrees C before depositing the metal layer, forming a hydrogen layer interposed between the silicon carbide substrate and the graphene layer, providing a seed layer over a silicon carbide layer, and extracting carbon from the silicon carbide layer to form a graphene layer and a graphene support. The silicon and carbon are non-uniformly distributed on a surface of the silicon carbide substrate over which the metal layer is deposited. The deposition of the metal layer is performed at 20-25 degrees C. The composite layer includes metal-silicide and a metal material. The metal-silicide is formed over a region of the silicon carbide substrate containing more silicon than carbon on a surface of the silicon carbide substrate. The metal material is formed on a region of the silicon carbide substrate containing more carbon than silicon on the surface of the silicon carbide substrate. The graphene layer is a single layer. The composite layer is interposed between the silicon carbide substrate and the graphene layer. The second heat treatment is performed to remove the metal remaining on the graphene layer and to remove the composite layer. The seed layer includes a metal. The graphene support is configured to support the graphene layer, and includes the silicon carbide layer and the composite layer. The step of the providing the seed layer includes forming the seed layer over a first portion of a surface of the silicon carbide layer. The first portion is composed of more silicon than carbon. The extracting step includes performing a heat treatment on the silicon carbide layer over which the seed layer is provided. The hydrogen layer is formed using a hydrogen gas, and binds to the silicon carbide layer. INDEPENDENT CLAIMS are included for: (1) a graphene structure; and (2) a graphene device. DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of a graphene structure. Silicon carbide substrate (10) Graphene layer (20) Inserting layer (30) Graphene structure. (100)