▎ 摘　　要

NOVELTY - The method involves depositing a graphene mask layer (2) on a substrate layer (3) by using a plasma enhanced chemical vapor deposition method. The graphene mask layer is etched to form a grating stripe structure (4). A gallium nitride layer (1) is grown on the substrate layer by metal organic chemical vapor deposition method. The graphene mask layer is heated to decompose disappear. A groove portion of the grating stripe structure is used for growing a window area of the gallium nitride layer. A convex portion of the grating stripe structure is a mask area. USE - Method for growing gallium nitride by using self-disappearing graphene mask. ADVANTAGE - The gallium nitride dislocation is effectively reduced and the growth quality is improved by the graphene mask layer structure. The graphene mask layer is decomposed and disappeared in the growth process, which the stress and small angle grain boundary defect caused by the mask to the gallium nitride are reduced. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the method for growing gallium nitride by using self-disappearing graphene mask. Gallium nitride layer (1) Graphene mask layer (2) Substrate layer (3) Grating stripe structure (4)