▎ 摘　　要

NOVELTY - A graphene in a dielectric material direct growing method, involves cleaning silicon wafer with thickness of 300 nm with ethyl alcohol, acetone and deionized water ultrasonically, and placing small aromatic molecules in crucible for depositing on the silicon wafer by vapor deposition. A copper precursor layer is formed on the silicon wafer by electron beam evaporation. The sample is placed in tubular furnace and argon gas is purged into the furnace. The silicon wafer is annealed to convert copper precursor layer into graphene layer. The annealed silicon wafer is etched. USE - Method for direct growing graphene in dielectric material. ADVANTAGE - The method enables growing graphene in dielectric material with reduced graphene growth temperature, avoiding transfer and other operations, and opening band gap in graphene. DETAILED DESCRIPTION - A graphene in a dielectric material direct growing method, involves cleaning silicon wafer with thickness of 300 nm with ethyl alcohol, acetone and deionized water ultrasonically, and placing small aromatic molecules in crucible for depositing on the silicon wafer by vapor deposition. A copper precursor layer is formed on the silicon wafer by electron beam evaporation. The small aromatic molecules are 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, and N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine. The sample is placed in tubular furnace and 20 sccm argon gas is purged into the furnace. The pressure in the furnace is maintained at 10 mtorr and temperature is increased. The silicon wafer is annealed at 600-1000 degrees C for 15 minutes under catalytic action of copper layer to convert copper precursor layer into graphene layer. The annealed silicon wafer is etched to expose graphene on the silicon wafer.