• 专利标题:   Locally reducing graphene oxide useful for electronic devices and semiconductor material, comprises e.g. preparing a graphene oxide thin film, and forming a self-reactive layer on upper surface of the graphene oxide thin film.
  • 专利号:   KR2016139179-A, KR1742374-B1
  • 发明人:   HO J R, SE G B, SEOUNG W K, SEUNG S K, WOO J L
  • 专利权人:   KOREA ADVANCED INST SCI TECHNOLOGY
  • 国际专利分类:   B01J019/08, B01J006/00, C01B031/04
  • 专利详细信息:   KR2016139179-A 07 Dec 2016 C01B-031/04 201705 Pages: 16
  • 申请详细信息:   KR2016139179-A KR073593 27 May 2015
  • 优先权号:   KR073593

▎ 摘  要

NOVELTY - Locally reducing graphene oxide, comprises (a) preparing a graphene oxide thin film (100), (b) forming a self-reactive layer on upper surface of the graphene oxide thin film, (c) locally reducing a portion of the graphene oxide thin film in which the self thin film layer is formed by applying magnetic field, and (d) removing the self-reactive layer to obtain locally reduced graphene oxide thin film (110). USE - The graphene oxide is useful for electronic devices, transparent display material, semiconductor material and transparent electrode material. ADVANTAGE - The graphene oxide has electrical conductivity and processability, and is economical. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene oxide thin film comprising a locally reduced portion. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the locally reduced graphene oxide. Graphene oxide thin film (100) Locally reduced graphene oxide thin film (110)