▎ 摘　　要

NOVELTY - A composite consists of a single crystal sapphire substrate having a dislocation density of less than 108/cm2, a metal film grown on the substrate, and a graphene film grown on the metal film. USE - Composite is used for electrode of transistor used in flexible device. ADVANTAGE - The composite has reduced dislocation density, controlled lamination number of layers, and suppressed generation of defects in the graphene film, and pit or abnormal growth in graphene film by dislocation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of composite, which involves preparing the sapphire substrate, epitaxially growing the metal film on the sapphire substrate, and epitaxially growing the graphene film on the metal film; (2) graphene film, which is obtained by peeling from the composite; and (3) manufacture of graphene film.