▎ 摘　　要

NOVELTY - The memory has an oxide dielectric layer and a palladium electrode film layer formed on a silicon substrate. A monolayer oxidized Graphite alkenes quantum point layer is coated on a zinc oxide film layer, where thickness of a Zinc Oxide film layer is 5-15 nm. The oxide dielectric layer is sequentially formed on the silicon substrate of a silicon dioxide tunneling oxide layer, a zinc oxide charge trapping layer i.e. single-layer grapheme oxide quantum dot layer, and an aluminum oxide barrier oxide layer. USE - Graphene oxide quantum dots based large memory window charge trapping memory. ADVANTAGE - The memory exhibits high stable data retention properties, excellent storage performance, low operation voltage, low power consumption, high memory density and high stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene oxide quantum dots based large memory window charge trapping memory preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene oxide quantum dots based large memory window trapped charge memory.