▎ 摘　　要

NOVELTY - The semiconductor device has an N-type substrate (1) whose one surface is provided with a back electrode metal (6). The other surface of the N-type substrate is provided with an N-type buffer layer (2). The N-type buffer layer is provided with an N-type epitaxial layer (3). The surface of the N-type epitaxial layer is provided with a graphene electrode (4). A high work function metal electrode (5) forms a Schottky contact with the N-type epitaxial layer. The graphene electrode is located on the top portion of the bump. The high work function metal electrode is located on the side of the bulge and the upper surface of the N type extension layer. USE - Semiconductor device for use in optoelectronics and power fields. ADVANTAGE - The turn-on voltage in the forward conduction state of the semiconductor device is reduced. The leakage current in the blocking state is reduced, so as to increase the breakdown voltage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacturing method of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the structure of a semiconductor device cell of a hybrid graphene electrode. (Drawing includes non-English language text) N-type substrate (1) N-type buffer layer (2) N-type epitaxial layer (3) Graphene electrode (4) High work function metal electrode (5) Back electrode metal (6)