▎ 摘　　要

NOVELTY - A reaction gas for graphene growth is contacted on a substrate (10) surface. The substrate is heated by the light irradiated from flash lamp and graphene is grown on the substrate. USE - Manufacture of graphene for fabricating graphene semiconductor device (claimed). ADVANTAGE - The graphene is manufactured economically and the graphene semiconductor device is manufactured with improved productivity without mechanical deformation of graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) graphene semiconductor device fabricating method, which involves forming graphene layer and patterning the formed layer; and (2) graphene manufacturing apparatus, which consists of chamber for accommodating the substrate, unit (20) for supplying the reaction gas, vacuum portion and light source (40) for irradiating light on the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the structure of the graphene manufacturing device. Substrate (10) Unit for supplying reaction gas (20) Light source (40) Reflective unit (50) Roll (60)