▎ 摘　　要

NOVELTY - The device has a semiconductor crystal material layer whose a surface is provided with an insulating isolation layer, where the insulating isolation layer is provided with a graphene material layer and a surface of the graphene material layer is provided with an induction signal electrode layer. The semiconductor crystal material layer is prepared by using a high atomic number cadmium zinc telluride crystal for generating an interaction with incident radiation photons, generating an electronic cloud and receiving a radiation surface to prepare a metal electrode cathode layer. The graphene material layer and the sensing signal collecting layer form a graphene field effect tube structure. USE - Graphene semiconductor radiation detection device. ADVANTAGE - The graphene material layer and the sensing signal collecting layer form the graphene field effect tube structure, so as to utilize a resistance value of the graphene material layer as detection physical quantity, effectively reduce high cost and complexity of a traditional charge sensitive preamplifier circuit and effectively improve anti-interference of a signal transmission link. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a radiation detecting device. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a graphene semiconductor radiation detection device.(Drawing includes a non-english language text).