• 专利标题:   Graphene precursor comprises insulator layer, where top portion of insulator layer is electrical insulator, metal layer is in contact with covering portion of insulator layer, carbon layer is in contact with metal layer.
  • 专利号:   US2018151352-A1
  • 发明人:   BUSCH J, LINDAMOOD L
  • 专利权人:   VAON LLC
  • 国际专利分类:   H01L021/02, H01L029/16, H01L021/28, C01B032/186
  • 专利详细信息:   US2018151352-A1 31 May 2018 H01L-021/02 201844 Pages: 14 English
  • 申请详细信息:   US2018151352-A1 US825209 29 Nov 2017
  • 优先权号:   US427252P, US825209

▎ 摘  要

NOVELTY - Graphene precursor comprises insulator layer, where top portion of insulator layer is electrical insulator, metal layer is in contact with covering portion of insulator layer, carbon layer is in contact with metal layer and the top of the insulator layer. The optional passivation layer is located between insulator layer and metal/carbon layers which is in contact with substantial portion of insulator layer at top. The optional metal adhesive layer is located between the metal layer and insulator layer or passivation layer. USE - Graphene precursor. ADVANTAGE - The graphene precursor has high carbon solubility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for growing graphene, which involves heating graphene precursor to temperature sufficient to initiate graphene formation, cooling graphene precursor; and (2) a graphene device, which comprises insulator layer, where top portion of the insulator layer is an electrical insulator.