• 专利标题:   Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.
  • 专利号:   CN107190315-A, CN107190315-B
  • 发明人:   PENG H, DENG B, LIU Z
  • 专利权人:   UNIV PEKING, UNIV PEKING
  • 国际专利分类:   C30B025/18, C30B029/02, C30B029/64
  • 专利详细信息:   CN107190315-A 22 Sep 2017 C30B-029/02 201773 Pages: 14 Chinese
  • 申请详细信息:   CN107190315-A CN10523050 30 Jun 2017
  • 优先权号:   CN10523050

▎ 摘  要

NOVELTY - Preparing graphene single crystal film comprises laminating copper (111) single-crystal thin film/sapphire, then firstly annealing surface outside and inner surface of the copper single-crystal thin film/sapphire and then depositing on the single-crystal thin film surface under atmospheric pressure chemical vapor deposition to obtain graphene single crystal film. USE - The method is useful for preparing graphene single crystal film (claimed). ADVANTAGE - The crystal film has rough graphene properties, oxidation resistance and conductivity properties.