▎ 摘　　要

NOVELTY - Integrated hybrid material high electron mobility transistor comprises a substrate, a silicon nitride layer, a graphene layer, an alloy region, an S/D electrode region and a G electrode region. The substrate is located above the substrate, and is respectively connected with the substrate. The graphene layer is located on both sides of the substrate above the doped semiconductor region, and not in contact with the D-sulfonate region. A G electrode area is provided with a G-electrode. The G electrode is located at the center of the D semiconductor area and is connected to the d semiconducting area. The alloy region is located directly above the semiconductor regions, and the graphene layer communicates with the semiconducted region through the alloy region. USE - The integrated mixed material high electron mobility transistor is used in e.g. heterojunction field effect transistor (HFET) and modulation doped FET (MODFET). ADVANTAGE - The integrated hybrid material high electron mobility transistor has improved carrier migration rate, reduced on-resistance, improved working frequency, increased radiating effect, and high performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the preparation method of integrated mixed material high electron mobility transistor.