• 专利标题:   Micro electro mechanical systems microphone manufacturing method, involves forming silicon oxide layer in one side of wafer, and forming graphene membrane layer on oxide layer, where oxide layer is used to form etching wafer portion.
  • 专利号:   KR1058475-B1, WO2011142637-A2, WO2011142637-A3
  • 发明人:   HUR S, LEE Y H, CHOI H, LEE Y
  • 专利权人:   KOREA INST MACHINERY MATERIALS
  • 国际专利分类:   H04R019/04
  • 专利详细信息:   KR1058475-B1 24 Aug 2011 H04R-019/04 201178 Pages: 13
  • 申请详细信息:   KR1058475-B1 KR045403 14 May 2010
  • 优先权号:   KR045403

▎ 摘  要

NOVELTY - The method involves manufacturing a membrane part and a backplate part. The membrane part and the backplate part are bonded. A silicon oxide layer is formed in one side of a wafer. A graphene membrane layer is formed on the silicon oxide layer. The silicon oxide layer is used to form an etching wafer portion. A nitride layer is formed on sides of the wafer. A white plate electrode is formed in one side of the wafer portion that remains after etching. USE - Method for manufacturing a micro electro mechanical systems microphone. ADVANTAGE - The microphone has broad frequency domain, and sound wave can be measured. The microphone ensures that graphene membrane is simple in structure and produced in mass as structure to separately store white plate electrode and electric charge. The microphone eliminates need for a vibrating film. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a micro electro mechanical systems microphone.