▎ 摘　　要

NOVELTY - Method for preparing thermal interface material based on high-density graphene interconnection network structure involves placing copper powder with a particle size of 5-50 mu m in a quartz mold of a certain shape, introducing reaction gas to grow graphene at a certain temperature through the chemical vapor deposition method, removing copper frame by etching means after growth to obtain graphene interconnection network structure, forming graphene/polymer composite material through glue filling process, and cutting off the surface portion to expose graphene to obtain the product. USE - The method is useful for preparing thermal interface material based on high-density graphene interconnection network structure. ADVANTAGE - The method simply grows the graphene network in one step through copper powder and etches away the foamed copper structure formed by the copper powder to obtain a sponge-like graphene interconnection network skeleton with high density and high thermal conductivity, and improves the mechanical strength and robustness of use through composite processing with polymers. The material is economical, and has low defect and high thermal conductivity.