▎ 摘　　要

NOVELTY - Preparation of double hetero junction based on pre-etched substrate involves selecting 4H-silicon carbide substrate, fabricating a 4H silicon carbide mesa on the 4H-silicon carbide substrate, fabricating a 3C-silicon carbide layer on the 4H-silicon carbide mesa and forming graphene layer on the surface of the 3C-silicon carbide layer. USE - Preparation of double hetero junction based on pre-etched substrate (claimed). ADVANTAGE - The method effectively isolates the defects of mutual influence due to use of substrate which is pre-etched to form a table surface, and as reduces the defects of the hetero junction structure due to use of better quality graphene material fabricated on the mesa.