▎ 摘　　要

NOVELTY - Forming (I) graphene material on a surface, comprises: forming a material substrate; depositing a metal material layer on the material substrate, where the metal material layer is one of a patterned metal material or a nanoparticle metal material; applying heating cycle to the metal material layer; introducing carbon atoms or carbon-containing molecules into the ambient atmosphere so that both metal atoms and carbon atoms or carbon-containing molecules are present in the ambient atmosphere at the same time to form a carbon-containing ambient; and continuing the heating cycle. USE - The method is useful for: forming graphene material on a surface (claimed); and making vertical graphene material structures that are used use as vertical current flow transistor, graphene channel 3 dimensional fin shaped FETs, sidewall spacer for double patterning lithography process, for triple patterning lithography process, as gate electrode for FET, electron field emitter, and high surface area electrodes for electrodes for double layer capacitors. ADVANTAGE - The method: is simple and provides graphene material with low edge roughness; forms graphene directly on a surface without having to use the conventional approach of forming a graphene material layer on a second substrate and then transferring the graphene from the second substrate to a first substrate; utilizes carbon material that can be amorphous carbon (has essentially no grains) or other forms of carbon material that have high density of sp3 bonds. DETAILED DESCRIPTION - Forming (I) graphene material on a surface, comprises: forming a material substrate; depositing a metal material layer on the material substrate, where the metal material layer is one of a patterned metal material or a nanoparticle metal material, having a bottom surface in contact with the material substrate and further having a top surface and at least one side surface not in contact with the material substrate; applying a heating cycle to the metal material layer so that the vapor pressure of the metal material is sufficient to cause metal atoms to be desorbed from the top surface of the metal material layer into an ambient atmosphere above a top surface of the material substrate; introducing carbon atoms or carbon-containing molecules into the ambient atmosphere so that both metal atoms and carbon atoms or carbon-containing molecules are present in the ambient atmosphere at the same time to form a carbon-containing ambient, where carbon from the carbon-containing ambient is deposited on the material substrate as graphene to form a seed graphene material layer for further lateral growth of graphene material on the material substrate from sp3 bonding sides on an edge of the seed graphene material layer; and continuing the heating cycle while the surface of the material substrate is further exposed to the carbon atoms or carbon-containing ambient, where the graphene material continues to grow laterally on the top surface of the material substrate. An INDEPENDENT CLAIM is also included for forming (II) graphene material on a surface, comprising: forming a material substrate; depositing a material layer on the material substrate; depositing a metal material layer on the material layer to form a material layer/metal material layer structure, where the metal material layer is one of patterned metal material layer or a nanoparticle metal material layer, has a bottom surface in contact with the material layer and further has top and at least one side surface not in contact with the material layer; applying heating cycle to the metal material layer so that the vapor pressure of the metal material is sufficient to cause metal atoms to be desorbed from the top surface of the metal material layer into an ambient atmosphere above a top surface of the material layer; introducing carbon atoms or carbon-containing molecules into the ambient atmosphere so that both metal atoms and carbon atoms or carbon-containing molecules are present in the ambient atmosphere at the same time to form carbon-containing ambient, where carbon from the carbon-containing ambient is deposited on the material layer as graphene to form a seed graphene material layer for further lateral growth of graphene material on the material layer from sp3 bonding sides on an edge of the seed graphene material layer; and continuing the heating cycle while the surface of the material layer is further exposed to the carbon atoms or carbon-containing ambient, where the graphene material continues to grow laterally on the top surface of the material layer.