• 专利标题:   Carbon-based electronic device e.g. thin-film transistor used for e.g. memory device, consists of substrate, gate insulation layer, gate electrode, and graphene oxide layer, which is partially reduced by irradiating using laser beam.
  • 专利号:   WO2014137180-A1, KR2014110431-A
  • 发明人:   KIM Y S, CHOI H S
  • 专利权人:   UNIV ULSAN FOUND IND COOP
  • 国际专利分类:   C01B031/02, H01B013/00, H01L029/78
  • 专利详细信息:   WO2014137180-A1 12 Sep 2014 H01B-013/00 201464 Pages: 39
  • 申请详细信息:   WO2014137180-A1 WOKR001877 07 Mar 2014
  • 优先权号:   KR024729

▎ 摘  要

NOVELTY - A carbon-based electronic device consists of a substrate (10), a graphene oxide layer (20) formed on the substrate, a gate insulation layer (40) formed on the graphene oxide layer, and a gate electrode (50) formed on the gate insulation layer. The graphene oxide layer is partially reduced by irradiating one surface of graphene oxide layer using laser beam. USE - Carbon-based electronic device e.g. thin-film transistor (claimed) is used for optical device and memory device. ADVANTAGE - The carbon-based electronic device has excellent transparency and reduced resistance, and is manufactured with high productivity, without performing etching process, by fast and economical process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of carbon-based electronic device, which involves forming the graphene oxide layer on the substrate, providing a mask on the formed graphene oxide layer, irradiating and patterning the mask and removing, and irradiating the graphene oxide layer using laser. DESCRIPTION OF DRAWING(S) - The drawing shows the cross-sectional view of the carbon-based electronic device. Substrate (10) Graphene oxide layer (20) Drain electrode (21) Source electrode (22) Channel layer (30) Gate insulation layer (40) Gate electrode (50)