• 专利标题:   Multi-stack graphene structure, has graphene layers and thin dielectric layers stacked on one another, where graphene layers comprise amorphous graphene, and electric field applying electric field to graphene layers.
  • 专利号:   US2018120595-A1, KR2018048211-A
  • 发明人:   JOO W, KANG J, KIM S, BRONGERSMA M L, FAN S, JOO W J, KANG J H, KIM S J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, UNIV LELAND STANFORD JUNIOR, SAMSUNG ELECTRONICS CO LTD, UNIV LELAND STANFORD JUNIOR
  • 国际专利分类:   G02F001/01, G02F001/19, C01B032/182, H01L021/02, H01L029/16
  • 专利详细信息:   US2018120595-A1 03 May 2018 G02F-001/01 201831 Pages: 24 English
  • 申请详细信息:   US2018120595-A1 US802086 02 Nov 2017
  • 优先权号:   US416352P, KR163899

▎ 摘  要

NOVELTY - The structure (100) has a graphene stack comprising graphene layers and thin film dielectric layers, where the graphene layers and the thin film dielectric layers are alternately stacked on one another, and the graphene layers comprise an amorphous graphene. An electric field (E1) applies an electric field to the graphene layers, where the amorphous graphene is present in a form of a pattern. The graphene layers are spaced apart from one other, where the thin film dielectric layers are provided between the graphene layers. USE - Multi-stack graphene structure. ADVANTAGE - The structure reduces thickness of a thin film dielectric layer, thus reducing spaces between graphene stacks, and enhancing an efficiency of the electric field. The efficiency of optical modulation of the multi-stack graphene structure may be enhanced as compared to a single layer graphene structure. The structure increases the graphene stacks so as to gradually increase an enhancement factor of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device for operating a multi-stack graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a multi-stack graphene structure. Electric fields (E1, E2, E3) Substrate (SUB) Waveguide (WG) Structure (100) Device (600)