▎ 摘　　要

NOVELTY - The device (1) has a carbon layer (20) provided with a graphene. Multiple microstructures (30) are grown up in an upper side of a carbon layer. A thin film layer (42) is arranged in the microstructures. A light emitting structure layer (40) is arranged on the thin film layer, where the light emitting structure layer is made of a n-type semiconductor layer and a p-type semiconductor layer (46). An electrode layer is formed on the light emitting structure layer. A substrate (10) is positioned in a lower part of the carbon layer. Another electrode layer is formed on a surface of the carbon layer. USE - Light emitting device. ADVANTAGE - The micro-structure has better crystallization, so that the device has better electrical property and optical property. The superior quality thin films are formed on the micro-structure, so that the device has high efficiency and better conductivity. The device is provided with the graphene, so that the performance degradation of the device is prevented. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a light emitting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a light emitting device. Light emitting device (1) Substrate (10) Carbon layer (20) Microstructures (30) Light emitting structure layer (40) Thin film layer (42) P-type semiconductor layer (46)