• 专利标题:   Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.
  • 专利号:   CN103247520-A
  • 发明人:   CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM
  • 国际专利分类:   H01L021/02, H01L021/265
  • 专利详细信息:   CN103247520-A 14 Aug 2013 H01L-021/265 201376 Pages: 7 Chinese
  • 申请详细信息:   CN103247520-A CN10026563 07 Feb 2012
  • 优先权号:   CN10026563

▎ 摘  要

NOVELTY - The method involves injecting catalytic substrate into carbon ion. The catalytic substrate into carbon ion is annealed to the carbon ion implantation, so as to form a graphene thin film layer on the catalyst substrate surface. One layer of graphene thin film layer structure of the catalytic substrate is removed to obtain the layer of graphene thin film layer. USE - Method for controlling stability of ion based on energy of ion implantation for preparing graphene. ADVANTAGE - The quality of the graphene layer is improved. The graphene is easy to transfer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene thin film layer. Graphene thin film layers (23,24)