• 专利标题:   Positive pressure synthesis of graphene involves placing foil in reaction chamber, introducing anaerobic gas, cleaning, filling with oxygen-free gas to positive pressure, heating, feeding carbon-containing gas, cooling, and removing foil.
  • 专利号:   CN103343328-A
  • 发明人:   LV P, ZHANG Z
  • 专利权人:   HEFEI MICROCRYSTALLINE MATERIALS TECHNOLOGY CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26, C23C016/44
  • 专利详细信息:   CN103343328-A 09 Oct 2013 C23C-016/26 201401 Pages: 6 Chinese
  • 申请详细信息:   CN103343328-A CN10290165 10 Jul 2013
  • 优先权号:   CN10290165

▎ 摘  要

NOVELTY - Graphene is synthesized under positive pressure by placing foil in chemical vapor deposition reaction chamber, introducing anaerobic gas, cleaning, filling with oxygen-free gas to positive pressure condition, and closing; heating to 700-1200 degrees C for 30-120 minutes, and keeping temperature for 10-100 minutes; and opening, feeding carbon-containing gas at flow rate of 5-50 cm3/minute for 10-30 minutes, maintaining pressure at not greater than 0.1 MPa, cooling at rate of not less than 5 degrees C/minute, and removing foil. USE - Method for synthesizing graphene under positive pressure (claimed). ADVANTAGE - The synthesis has low copper foil quality requirements.