• 专利标题:   Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.
  • 专利号:   US2014255500-A1, EP2778129-A1, KR2014111548-A, JP2014193804-A, US9371235-B2, JP6366305-B2
  • 发明人:   SON I H, LEE S J
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B031/04, H01L021/02, B01J023/755, B82B001/00, B82B003/00, C01B031/02, B82Y030/00, B82Y040/00, H01L021/20, H01L021/368, A61K009/00, B01J021/04, C01B032/05
  • 专利详细信息:   US2014255500-A1 11 Sep 2014 C01B-031/04 201463 Pages: 26 English
  • 申请详细信息:   US2014255500-A1 US202728 10 Mar 2014
  • 优先权号:   KR025846

▎ 摘  要

NOVELTY - Preparing graphene, comprises supplying a gas (including carbon dioxide, methane and water) on a metal catalyst, and reacting and cooling the resultant. USE - The method is useful for preparing graphene, which is used for manufacturing a semiconductor circuit, and in a graphene-encapsulated metal nanoparticle for light emitting material for a display, an electrode material of a battery or a solar cell, an in vivo drug delivery material (all claimed), sensors, and memories. ADVANTAGE - The method ensures that the graphene can be easily processed into a one- or two-dimensional nanopattern to adjust semiconductor-conductor properties, thus massively producing the graphene with large area, low cost and high reproducibility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a graphene-encapsulated metal nanoparticle prepared by the above method; and (2) a hollow graphene nanoparticle prepared by removing the metal nanoparticle from the graphene-encapsulated metal nanoparticle.