▎ 摘　　要

NOVELTY - The utility model claims an asymmetric area graphene metal heterojunction photoelectric detector, comprising a silicon substrate, a silicon dioxide layer, the aluminium oxide passivation layer, a high work function electrode, the low work function electrode and the graphene layer, the upper silicon dioxide layer located on the silicon substrate, the high work function electrode and a low work function electrode are located on one side far away from the silicon dioxide layer of the silicon substrate, the high work function electrode and a low work function electrode have gap between them, one side of the graphene layer on the high work function electrode and a low work function electrode away from the silicon dioxide layer. and coverage gaps, the contact area of the high work function electrode and the graphene layer is greater than the low work function electrode and the contact area of the graphene layer. the graphene layer above the high work function electrode and a low work function electrode, increasing the light absorption area, and the high work function electrode and a low work function electrode and the graphene layer non-symmetrically set, the high work function electrode is greater than the low work function electrode, improves the photocurrent increases the asymmetric area graphene metal heterojunction photodetector practicability.