• 专利标题:   Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.
  • 专利号:   US2015235730-A1, US9786405-B2
  • 发明人:   AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K
  • 专利权人:   INT BUSINESS MACHINES CORP, EGYPT NANOTECHNOLOGY CENT EGNC, EGYPT NANOTECHNOLOGIES CENT
  • 国际专利分类:   C23F001/02, H01B001/04, B32B015/20, B32B003/00, B32B009/00, B32B009/04, H01L021/02, H01L021/04, H01L021/324
  • 专利详细信息:   US2015235730-A1 20 Aug 2015 H01B-001/04 201557 English
  • 申请详细信息:   US2015235730-A1 US699471 29 Apr 2015
  • 优先权号:   US310885, US699471

▎ 摘  要

NOVELTY - The graphene nanomesh structure (102) has a patterned structure of a carbide-forming metal or metal-containing alloy disposed on top of a substrate. A graphene is formed on top of the patterned structure on the substrate. The graphene is reacted with the patterned structure to remove graphene regions proximate to the patterned structure of carbide-forming metal or metal-containing alloy to produce the graphene nanomesh structure on the substrate. USE - Graphene nanomesh structure for providing carrier mobility for electronic devices. ADVANTAGE - Patterned structure of a carbide-forming metal or metal-containing alloy is self-assembled. Hydrogen containing environment is preferable for facilitating the production of carbon-containing volatiles that are more completely removed from the reaction area than carbon remaining in the metal nanodot. Patterned structure of carbide-forming metal or metal-containing alloy can be patterned lithographically by deposition or etching through a mask. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of the graphene nanomesh structure. Graphene nanomesh structure (102)