▎ 摘　　要

NOVELTY - Preparing an epitaxial structure for a gallium nitride-based radio frequency device, comprises providing a silicon carbide substrate, and performing surface cleaning treatment, performing surface reconstruction of the assisted silicon beam on the silicon carbide substrate, annealing the silicon carbide substrate to produce a graphene film on the reconstructed surface, growing an aluminum nitride buffer layer on the graphene film, growing a gallium nitride high resistance buffer layer on the aluminum nitride buffer layer, growing a gallium nitride channel layer on the gallium nitride high resistance buffer layer, growing an indium-galliun-nitride (InGaN)/aluminum-gallium-nitride (AlGaN) barrier layer on the gallium nitride channel layer and growing a silicon nitride cap layer on the InGaN/AlGaN barrier layer. USE - The method is useful preparing epitaxial structure for gallium nitride-based radio frequency device. ADVANTAGE - The epitaxial structure is applied to the high frequency radio frequency device, and improves the radio frequency loss of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for epitaxial structure for gallium nitride-based radio frequency device