• 专利标题:   Formation of graphene sheet-type material for e.g. manufacturing semiconductor integrated circuit device, involves modifying edge portion of graphene sheet by activated electron-donating functional group.
  • 专利号:   JP2012036040-A
  • 发明人:   ASANO T, HARADA N
  • 专利权人:   FUJITSU LTD
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2012036040-A 23 Feb 2012 C01B-031/02 201217 Pages: 18 Japanese
  • 申请详细信息:   JP2012036040-A JP177851 06 Aug 2010
  • 优先权号:   JP177851

▎ 摘  要

NOVELTY - A specific substance capable of generating electron-donating functional group, is activated by irradiating ultraviolet-ray. The edge portion of graphene sheet is chemically modified or physically modified by the activated electron-donating functional group to obtain graphene sheet-type material. USE - Formation of graphene sheet-type material (claimed) used for manufacture of semiconductor integrated circuit device and graphene channel transistor. ADVANTAGE - The method efficiently provides graphene sheet-type material having excellent electrical property.