▎ 摘　　要

NOVELTY - Preparing black phosphorus field effect transistor with black phosphorus oxide dielectric layer as top grid comprises using micro-mechanical exfoliation method to obtain thin-layer black phosphorus, transferring into the electrode substrate that has been prepared by patterning, and using oxygen plasma etching to form an oxide layer on the surface of the thin black phosphorus as a dielectric gate. The black phosphorus oxide dielectric gate is a dense PxOy layer. USE - Preparation method of black phosphorus field effect transistor with black phosphorus oxide dielectric layer as top grid is used in logic device, photoelectric detector, radio frequency device and flexible device. ADVANTAGE - the black phosphorus oxide dielectric layer is a top-gate black phosphorus transistor, which brings a new realization method for improving the bad interface between the gate insulator and the black phosphorus semiconductor channel. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a black phosphorus field effect transistor with a black phosphorus oxide dielectric layer as the top grid prepared by the baove-mentioned method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the field effect transistor. 1Silicon substrate 2Silicon dioxide 3Layer black phosphorus 4Oxide black phosphorus pxoy 5Source-drain electrode au 6Layer graphene