• 专利标题:   Preparing graphene in closed static system for the preparation of integrated circuits, and optoelectronic devices, and sensors or solar cell, involves providing substrate, where substrate comprising catalyst, substrate.
  • 专利号:   CN108502871-A
  • 发明人:   LIU L, XU J, HU J, LI Q, LI W, LIU F
  • 专利权人:   CHINESE ACAD SCI SUZHOU NANOTECH NANO
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN108502871-A 07 Sep 2018 C01B-032/186 201871 Pages: 15 Chinese
  • 申请详细信息:   CN108502871-A CN10103785 24 Feb 2017
  • 优先权号:   CN10103785

▎ 摘  要

NOVELTY - Preparing graphene in closed static system involves providing a substrate, where substrate comprising a catalyst. The substrate is placed in a sealed reaction chamber, and a carbon source, a hydrogen gas, and a shielding gas are introduced into the sealed reaction chamber to a set pressure to form a closed static system, and the closed static system is heated to 800-1060 degrees C, the carbon source is sufficiently contacted with the catalyst to carry out a high temperature catalytic decomposition reaction to grow graphene on the surface and/or inside of the substrate. USE - Method for preparing graphene in closed static system used for the preparation of integrated circuits, optoelectronic devices, and sensors or solar cells (claimed). ADVANTAGE - The method enables to prepare graphene in closed static system which has wide application prospect.