▎ 摘　　要

NOVELTY - The method involves assembling an organic layer in a graphene surface. An inorganic layer is deposited in a double-layer protecting layer. A spin is coated in an optical resist layer. A metal electrode is formed with an image in the inorganic layer surface. A graphene-metal contact area is provided with the inorganic layer. An organic thin film is fixed in the graphene metal contact. A photoetching image is formed in a graphene field effect transistor. USE - Graphene metal contact removing method. ADVANTAGE - The method enables preventing damage of the graphene surface and reducing graphene doped degree, thus maintaining high carrier migration rate of the graphene field effect transistor and improving performance of the graphene material. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene metal contact removing method. '(Drawing includes non-English language text)'