▎ 摘　　要

NOVELTY - Preparing flexible photoelectric conversion device comprises sputtering using indium tin oxide film on the graphene layer in the graphene/flexible transparent substrate structure, coating, annealing, forming tin oxide film, dissolving the lead iodide and methylammonium iodide N, N- dimethylformamide and dimethyl sulfoxide mixed solution, coating, annealing, forming perovskite film on the tin oxide film, coating spiro-OMeTAD/chlorobenzene solution on the perovskite film, spinning, performing vacuum thermal deposition on the Spiro-OMeTAD film and forming gold electrode. USE - The method is useful for preparing flexible photoelectric conversion device (claimed). ADVANTAGE - The method is simple and economical and does not need high temperature and improves the battery capacity. The device has good transparency, good flexibility, and good stability. DETAILED DESCRIPTION - Preparing flexible photoelectric conversion device comprises cleaning and ultra-sonicating the flexible transparent substrate was using acetone, absolute ethanol and deionized water for 15 minutes, drying the flexible transparent substrate, spin-coating using 6% polymethylmethacrylate solution on copper foil with graphene film on the surface, forming polymethylmethacrylate/graphene/copper foil structure, placing the polymethylmethacrylate/ graphene/copper foil structure in an etchant for 30 minutes, etching, removing the copper foil, obtaining the polymethylmethacrylate/graphene structure, transferring the transferred/graphene structure into deionized water, cleaning using the flexible transparent substrate, forming polymethylmethacrylate/graphene/flexible transparent substrate structure, placing the cleaned polymethylmethacrylate/graphene/flexible transparent substrate structure vertically for 12-24 hours, heating at 60 degrees C for 20 minutes, cooling the polymethylmethacrylate/graphene/flexible transparent substrate structure, soaking in acetone solution, removing the polymethylmethacrylate, obtaining graphene/flexible transparent substrate structure, placing in a sputtering chamber, sputtering with indium tin oxide ceramic as the target, making target distance of 65 mm, target diameter of 5 cm and target thickness of 6 mm, rotating at 10 revolutions/minute, vacuum sputtering in a vacuum chamber at 1 /asterisk 10 -5 Pa using high-purity argon as a sputtering gas, pre-sputtering for 5 minutes, sputtering using indium tin oxide film on the graphene layer in the graphene/flexible transparent substrate structure, coating using 0.075 mol/l indium tin oxide solution on the indium tin oxide film, annealing at 100 degrees C for 10 minutes in heating stage, annealing at 150 degrees C for 60 minutes, forming tin oxide film on the indium tin oxide film film, dissolving the lead iodide and methylammonium Iodide in a molar ratio of 1:1 in N, N- dimethylformamide and dimethyl sulfoxide mixed solution in a volume ratio of 9:1, spin coating the mixed solution on the tin oxide film using ether, annealing at 65 degrees C on the heating stage for 1 minute, annealing at 100 degrees C for 9 minutes, forming perovskite film on the tin oxide film, coating spiro-OMeTAD/chlorobenzene solution on the perovskite film, spinning for 30 seconds at 4000 revolutions/minute, forming Spiro-OMeTAD film on the perovskite film, performing vacuum thermal deposition on the Spiro-OMeTAD film and forming gold electrode with a thickness of 80 nm. An INDEPENDENT CLAIM is also included for the flexible photoelectric conversion device is prepared by above mentioned method.