▎ 摘　　要

NOVELTY - Several particles (12) having carbon absorption property are deposited on graphene (11) at predetermined temperature or more, heated at predetermined temperature or more such that the particles absorb the carbon in a portion of the graphene below the particles, and particles are removed, to obtain graphene nanomesh (10). USE - Manufacture of graphene nanomesh used for manufacturing semiconductor device e.g. large-scale integrated circuit and manufacturing photodetector (all claimed). ADVANTAGE - The sufficient band gap graphene nanomesh is manufactured by a simple process. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of semiconductor device, which involves providing the graphene nanomesh on a substrate (14), providing a source electrode and a drain electrode in both the ends of the graphene nanomesh to obtain a structural component, and providing a gate electrode between the source electrode and the drain electrode which controls electric potential of the graphene nanomesh; and (2) manufacture of photodetector. DESCRIPTION OF DRAWING(S) - The drawings show the view of manufacture of graphene nanomesh. Graphene nanomesh (10) Graphene (11) Particles (12) Hole (13) Substrate (14)