• 专利标题:   Graphene structure, has silicon oxide substrates formed on silicon substrate and paved with graphite alkene layer, where upper surface of silicon oxide substrates is S-shaped fluctuation surface.
  • 专利号:   CN102832431-A
  • 发明人:   ZHU W, LU W, XU H
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   H01P003/18
  • 专利详细信息:   CN102832431-A 19 Dec 2012 H01P-003/18 201325 Pages: 6 Chinese
  • 申请详细信息:   CN102832431-A CN10289686 14 Aug 2012
  • 优先权号:   CN10289686

▎ 摘  要

NOVELTY - The structure has silicon oxide substrates (2) formed on a silicon substrate (3), where upper surface of the silicon oxide substrates is S-shaped fluctuation surface. The silicon oxide substrates are paved with a graphite alkene layer (1). Chemical potential of the graphite alkene layer is 0.8 electrovolt. USE - Graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene structure. Graphite alkene layer (1) Silicon oxide substrates (2) Silicon substrate (3)