• 专利标题:   Modification method of hole transport layer used in carbon-based perovskite solar cell, involves adding graphene oxide into precursor solution, stirring uniformly, and mixing graphene oxide and Spiro-OMeTAD without additionally introducing oxygen.
  • 专利号:   CN115884650-A
  • 发明人:   WANG Y, LI W, SHI Y
  • 专利权人:   UNIV DALIAN TECHNOLOGY
  • 国际专利分类:   H10K030/40, H10K030/50, H10K030/86, H10K071/30
  • 专利详细信息:   CN115884650-A 31 Mar 2023 H10K-071/30 202335 Chinese
  • 申请详细信息:   CN115884650-A CN10061643 18 Jan 2023
  • 优先权号:   CN10061643

▎ 摘  要

NOVELTY - Method for modifying a hole transport layer, involves adding graphene oxide to a precursor solution of the hole transportation layer, stirring uniformly to fully mix the graphene oxide and Spiro-OMeTAD, without additionally introducing oxygen, where the method further comprises oxidizing the hole transport material, and improving the interface between the graphene electrode and the hole transfer layer. USE - Method for modifying a hole transport layer of a carbon-based perovskite solar cell i.e. organic small molecule Spiro-OMeTAD. ADVANTAGE - The method realizes rapid oxidation of Spiro-OMeTAD under oxygen-free condition, and improves the carbon-based perovskite solar battery interface matching problem. The oxidized SpiroOMETAD has a suitable energy level, good charge transport performance and excellent device stability. Due to the modification of GO, the prepared hole transport layer roughness is increased, and the graphene carbon electrode can form a tight contact, so as to improve the contact electrode and the hole transport layers. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a carbon-based perovskite solar cell section SEM image.