▎ 摘　　要

NOVELTY - The method for preparing nanocrystalline graphene on sapphire substrate, involves placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, vacuuming, introducing inert gas, heating sapphire substrate, pretreating the sapphire substrate in hydrogen atmosphere, setting source power, setting chamber pressure, setting hydrogen gas flow rate, forming plasma, introducing carbon sources, setting carbon source flow rate, setting growth time of graphene and cooling to room temperature. USE - Method for preparing nanocrystalline graphene on sapphire substrate. ADVANTAGE - The method enables preparation of nanocrystalline graphene on sapphire substrate at low cost. DETAILED DESCRIPTION - Method for preparing nanocrystalline graphene on sapphire substrate, involves (1) placing sapphire substrate in graphene plasma-enhanced chemical vapor deposition equipment, vacuuming, introducing inert gas at certain pressure, (2) heating the sapphire substrate at certain temperature, (3) pretreating the sapphire substrate in hydrogen atmosphere, (4) setting the source power of plasma-enhanced chemical vapor deposition at certain power, setting the chamber pressure at certain pressure, setting the hydrogen gas flow at certain flow rate, opening the plasma-enhanced chemical vapor deposition plasma power supply, forming a plasma, (5) introducing carbon sources, setting carbon source flow rate, setting growth time of graphene, (6) switching off the carbon source and plasma-enhanced chemical vapor deposition equipment and cooling to room temperature.