▎ 摘　　要

NOVELTY - The structure has a sapphire substrate whose upper surface is grown with multiple inverted conical pits. An inner surface of each inverted cone-shaped pit is formed with a graphene thin film layer. An aluminum ball layer is grown on the graphene film layer that is grown above the aluminum ball layer. The graphene thin membrane layer is provided with a silicon nitride film layer and a carbon nanofiber film layer. The carbon nanometre film layer is formed as a polyurethane film layer or a silicon carbide film layer formed as an insulating film. USE - The epitaxial structure is useful in high-end large power chip e.g. lamp for lamp LED. The LED is a semiconductor light emitting device. ADVANTAGE - The epitaxial structure improves the quality of the gallium nitride material layer grown on the aluminum nitride film and aluminum film, forms the nano- level window to enhance the reflection of light, improves the luminous efficiency, and improves the radiating effect generated by the light emitting diode and reduces the dislocation density of the whole multi-quantum well layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of epitaxial structure of light emitting diode. DESCRIPTION OF DRAWING(S) - The drawing shows a partial structural schematic diagram of the epitaxial structure of the light emitting diode.