• 专利标题:   Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.
  • 专利号:   FR3018282-A1, WO2015132537-A1, KR2016130485-A, US2017016111-A1, EP3129518-A1, US10337102-B2
  • 发明人:   DIJON J, TYURNINA A
  • 专利权人:   COMMISSARIAT ENERGIE ATOMIQUE, COMMISSARIAT ENERGIE ATOMIQUE
  • 国际专利分类:   C23C016/26, C01B031/04, C23C014/06, C23C014/26, C23C016/455, C23C016/46, C01B032/182, C01B032/186
  • 专利详细信息:   FR3018282-A1 11 Sep 2015 C23C-016/26 201563 Pages: 26 French
  • 申请详细信息:   FR3018282-A1 FR000560 07 Mar 2014
  • 优先权号:   FR000560

▎ 摘  要

NOVELTY - Forming a graphene film comprises successive steps of: placing a substrate (1) and a carbon source (2) into a reaction chamber (3) provided with a gas inlet (4); and heating the carbon source under a flow of gas so as to convert at least a portion of the carbon source into a graphene film on the substrate, where the gas is free of hydrocarbon, and the carbon source is a solid carbon source. USE - The method is useful for forming graphene film (claimed) for microelectronics and spin electronics applications, and in transparent conductive films. ADVANTAGE - The method facilitates the formation of continuous, uniform and homogeneous graphene film in a controlled and precise manner and without requiring the use of high temperatures and without formation of any defects. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device configured to develop the graphene film on the substrate, comprising the reaction chamber provided with the carbon source and a support (5), where the support is for holding the substrate, the gas inlet configured to form a directed gas flow from the gas inlet to the carbon source, and a heater configured to heat the solid carbon source. DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of the device for forming the graphene film. Substrate (1) Carbon source (2) Reaction chamber (3) Gas inlet (4) Support (5)