▎ 摘　　要

NOVELTY - Forming a graphene film comprises successive steps of: placing a substrate (1) and a carbon source (2) into a reaction chamber (3) provided with a gas inlet (4); and heating the carbon source under a flow of gas so as to convert at least a portion of the carbon source into a graphene film on the substrate, where the gas is free of hydrocarbon, and the carbon source is a solid carbon source. USE - The method is useful for forming graphene film (claimed) for microelectronics and spin electronics applications, and in transparent conductive films. ADVANTAGE - The method facilitates the formation of continuous, uniform and homogeneous graphene film in a controlled and precise manner and without requiring the use of high temperatures and without formation of any defects. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a device configured to develop the graphene film on the substrate, comprising the reaction chamber provided with the carbon source and a support (5), where the support is for holding the substrate, the gas inlet configured to form a directed gas flow from the gas inlet to the carbon source, and a heater configured to heat the solid carbon source. DESCRIPTION OF DRAWING(S) - The figure shows a schematic sectional view of the device for forming the graphene film. Substrate (1) Carbon source (2) Reaction chamber (3) Gas inlet (4) Support (5)