▎ 摘　　要

NOVELTY - Preparing silicon carbide-graphene core-shell nanowire array comprises (a) cleaning, drying, etching, protecting, and balancing the silicon content of the silicon carbide sheet to obtain processed silicon carbide wafer, (b) using the silicon carbide wafer as anode, and graphite sheet as cathode, where the etching solution composed of hydrogen fluoride, ethyl alcohol, and hydrogen peroxide as electrolyte, subjecting the silicon carbide wafer to electrochemical corrosion treatment by anodic oxidation method, and stripping to obtain a 4H-SiC nanowire array film, (c) placing the 4H-SiC nanowire array film in a vacuum radio frequency induction chemical vapor deposition furnace, introducing the argon gas with a flow rate of 2 k/minute, maintaining a pressure of 5 mbar in the reaction chamber, maintaining the temperature of the system at 1300-1700°C, and reacting for 1-1.5 hours. USE - The method for preparing silicon carbide-graphene core-shell nanowire array is useful in preparation of self-powered photodetectors (claimed). ADVANTAGE - The preparation method overcomes the inability of silicon carbide nanowires to meet high-performance requirements as photoelectric detection sensitive units, realizes the preparation of wide-spectrum photodetectors by adjusting the number of layers of graphene. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: ilicon carbide-graphene core-shell nanowire array prepared by the above-mentioned method; use of silicon carbide-graphene core-shell nanowire array in preparation of self-powered photodetectors.