• 专利标题:   Residue free transfer method of graphene/metal sample pasted by limited polymer line, transferring graphene, coating polymer coating material in metal flake, hardening of metal flake, etching metal foil and rinsing with distilled water.
  • 专利号:   KR2016049915-A, KR1648895-B1
  • 发明人:   HWANG C Y, YOO K J
  • 专利权人:   KOREA RES INST STANDARDS SCI
  • 国际专利分类:   B82B003/00, C01B031/04
  • 专利详细信息:   KR2016049915-A 10 May 2016 C01B-031/04 201636 Pages: 10 English
  • 申请详细信息:   KR2016049915-A KR147726 28 Oct 2014
  • 优先权号:   KR147726

▎ 摘  要

NOVELTY - The residue free transfer method of graphene/metal sample involves transferring graphene grown up in the substrate without the polymer residue, coating polymer coating material in the metal flake so as to form polymer hem, hardening the metal flake in which the polymer hem is coated in the atmospheric environment or the vacuum atmosphere, etching a metal foil or a metal thin film formed on the metal cages with polymer etch solution, rinsing with distilled water by replacing the metal etching solution after etching, transferring graphene, and drying in air atmosphere or vacuum atmosphere. USE - Residue free transfer method of graphene/metal sample pasted by limited polymer line (claimed). ADVANTAGE - The method enables residue free transfer method of graphene/metal sample pasted by limited polymer line with low cost. DETAILED DESCRIPTION - The residue free transfer method of graphene/metal sample involves transferring graphene grown up in the substrate without the polymer residue, coating polymer coating material in the metal flake in which the graphene is grown up in the substrate so as to form polymer hem, hardening the metal flake in which the polymer hem is coated in the atmospheric environment or the vacuum atmosphere, etching a metal foil or a metal thin film formed on the metal cages with polymer etch solution, rinsing with distilled water by replacing the metal etching solution after etching, transferring graphene grown up in the substrate after rinsing at the lower portion of graphene, and drying in an air atmosphere or a vacuum atmosphere.