• 专利标题:   Preparation method of nitrogen-sulfur doped three-dimensional graphene, involves directly injecting nitrogen source and sulfur source using micro-injection pump on foamed nickel substrate in atmosphere of argon and hydrogen.
  • 专利号:   CN106207109-A
  • 发明人:   FENG Y, WANG W, FENG W
  • 专利权人:   UNIV TIANJIN
  • 国际专利分类:   H01M010/0525, H01M004/36, H01M004/587, H01M004/62
  • 专利详细信息:   CN106207109-A 07 Dec 2016 H01M-004/36 201710 Pages: 7 Chinese
  • 申请详细信息:   CN106207109-A CN10538397 08 Jul 2016
  • 优先权号:   CN10538397

▎ 摘  要

NOVELTY - The preparation method of nitrogen-sulfur doped three-dimensional graphene involves directly injecting nitrogen source and sulfur source using micro-injection pump on a foamed nickel substrate at 600-800 degrees C and at rate of 5-20 ml/hour for 1-5 minutes in an atmosphere of 500-1000 sccm argon and 50-100 sccm hydrogen. USE - Preparation method of nitrogen-sulfur doped three-dimensional graphene used in lithium ion electrode and electro-catalytic application. ADVANTAGE - The method enables preparation of nitrogen-sulfur doped three-dimensional graphene with low toxicity, strong controllability, large specific surface area, 20 mA/g current, maximum capacity of more than 500 mAh/g, and excellent performance, by simple process.