▎ 摘　　要

NOVELTY - The transistor (100) has graphene film (10) that is formed between source electrode and drain electrode. The graphene film has source side end (10S) whose width is narrower than width of drain side end (10D). A gate electrode (12) is formed through gate insulating film (11) on semiconductor region of the graphene film and conductor region of the graphene film. The source electrode is connected to the source side end of the graphene film with Schottky contact, and the drain electrode is connected to the drain side end of the graphene film with ohmic contact. USE - Transistor e.g. field effect type graphene transistor. ADVANTAGE - The electron has high mobility inside of the conductor region, and is moved from the source to the drain by the Schottky barrier. Thus, the transistor provides high current drive force and high cut-off characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the transistor. Graphene film (10) Drain side end (10D) Source side end (10S) Gate insulating film (11) Gate electrode (12) Transistor (100)