• 专利标题:   Graphene reference resolution method involves preparing standard graphene to draw effective information about graphene thickness including full width at half maximum and inter-layer space from diffraction peak of graphene crystal plane.
  • 专利号:   KR1494359-B1, WO2015152483-A1
  • 发明人:   SEUNG H H, HUR S H
  • 专利权人:   KOREA INST CERAMIC ENG TECHNOLOGY
  • 国际专利分类:   G01B015/02, G01N023/00
  • 专利详细信息:   KR1494359-B1 24 Feb 2015 G01B-015/02 201520 Pages: 17
  • 申请详细信息:   KR1494359-B1 KR039101 02 Apr 2014
  • 优先权号:   KR039101, KR066946

▎ 摘  要

NOVELTY - The method involves getting diffraction peak of graphene crystal plane having a specific Miller index. The standard graphene defined with floor number is prepared to draw effective information about graphene thickness including full width at half maximum (FWHM) and inter-layer space from diffraction peaks of graphene crystal plane having Miller index. The X-ray diffraction (XRD) measurement about standard graphene is performed. USE - Graphene reference resolution method. ADVANTAGE - The applicability and the competitive power of the graphene are strengthened. The sold specification of nano-silica is accurately clarified and classified to individual size, purity etc, if the silica nanopowder is given. The diversity and certainty of graphene product, and the reliability insurance and product competitiveness of finished product are strengthened. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the nano thin film analysis method. DESCRIPTION OF DRAWING(S) - The drawing shows a graph illustrating the relationship between reciprocal of graphene thickness and full width at half maximum.