• 专利标题:   Spontaneous deposition method of three-dimensional graphene on conductive substrate involves making three-dimensional graphene, depositing on surface of substrate, freezing, drying, depositing, vacuum sputtering spraying, and making.
  • 专利号:   CN103265022-A, CN103265022-B
  • 发明人:   QU L, HU C, DI X
  • 专利权人:   BEIJING INST TECHNOLOGY
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103265022-A 28 Aug 2013 C01B-031/04 201379 Pages: 22 Chinese
  • 申请详细信息:   CN103265022-A CN10217510 03 Jun 2013
  • 优先权号:   CN10217510

▎ 摘  要

NOVELTY - Spontaneous deposition method of three-dimensional graphene on conductive substrate involves making graphene oxide solution; adding oxidized graphite alkene solution, diluting; the conductive substrate is the prepared graphene oxide solution, reacting for 6-12 hours and taking out substrate, reducing graphene oxide to form three-dimensional graphene, and deposited on the surface of the substrate; directly freezing and drying to form dry porous functional three-dimensional graphene; depositing; vacuum sputtering spraying; semi vacuum sputtering spraying; and diluting. USE - As spontaneous deposition method of three-dimensional graphene on conductive substrate (claimed). ADVANTAGE - The preparation process is simple, and environment-friendly. The three dimensional graphite material structure is three-dimensional, and porous; and has large specific surface area, and good flexibility. DETAILED DESCRIPTION - Spontaneous deposition method of three-dimensional graphene on conductive substrate involves using oxidation method to prepare exfoliated graphite so as to obtain 8-20 mg/ml of graphene oxide solution; adding 8-20 mg/ml of oxidized graphite alkene solution, diluting the graphene oxide solution having concentration of 0.5-3 mg/ml; the conductive substrate is the prepared graphene oxide solution, reacting for 6-12 hours and taking out conductive substrate, reducing graphene oxide to obtain three-dimensional graphene, and deposited on the surface of the conductive substrate; directly freezing and drying to obtain dry porous functional three-dimensional graphene, or washing and then freezing and drying to obtain three-dimensional graphene in a metal oxide to obtain the pure dry porous three-dimensional graphene, the conductive substrate is less than six, where the first one is Zn, Fe, Al, Co or Cu, and the second one is vacuum sputtering spraying Cu, Ag, Pt or Au foil; depositing Ag, Pt or Au by chemical reaction of Cu foil; vacuum sputtering spraying Cu or Si sheet; semi vacuum sputtering spraying Cu conductive surface of the conductive glass, where the graphene film is Cu substrate; diluting by distilled water, when the conductive substrate is Al or Co, the standing temperature is 60 degrees C, when the conductive substrate is not Al, or Co; standing temperature is between room temperature to 60 degrees C.