▎ 摘　　要

NOVELTY - The photo detection element has a substrate, a infrared light-receiving layer that is formed over the substrate. The infrared light-receiving layer includes graphene layers and spacer layers that are alternately stacked. The infrared light passes through each of the spacer layers. The spacer layers are made of insulating material. A first electrode is in contact with the infrared light-receiving layer. A second electrode is in contact with the infrared light-receiving layer. A material of the second electrode is different from a material of the first electrode. The spacer layer is made of transition metal di-chalcogenide. USE - Photo detection element of optical sensor (claimed) used in imaging device for detecting change in temperature of thin film irradiated with light. ADVANTAGE - The contact resistance between the light-receiving layer and the first electrode is reduced. The contact resistance between the first electrode and the graphene layers is further reduced. The optical sensor allows an image to be obtained, even when a infrared light is weak, because the sensitivity of the photo detection element is increased by alternately stacking the graphene layers and the spacer layers. The photo-thermoelectric effect is sufficiently exerted in each of the graphene layers without impairing the characteristics of the graphene layers, such as high electron mobility and wavelength-independent light absorptivity and the sensitivity of the photo detection element is enhanced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of photo detection element. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the molecular structure of graphene used in a photo detection element.