• 专利标题:   Bundled nanotube graphene based microbolometer e.g. infrared sensor for detecting electromagnetic radiation in display, has thin graphene film tuned to increase sensitivity of infrared detector by increasing density of carbon nanotubes.
  • 专利号:   US8916825-B1
  • 发明人:   EGERTON E J, SOOD A K
  • 专利权人:   MAGNOLIA OPTICAL TECHNOLOGIES INC
  • 国际专利分类:   G01J005/02
  • 专利详细信息:   US8916825-B1 23 Dec 2014 G01J-005/02 201502 Pages: 13 English
  • 申请详细信息:   US8916825-B1 US308688 01 Dec 2011
  • 优先权号:   US308688

▎ 摘  要

NOVELTY - The microbolometer has conductive terminals that are in electrical communication with a thin film of graphene (120). The film is tuned such that exposure of a radiation induces change in impedance between the terminals, which is sensed by a complementary metal-oxide semiconductor readout circuitry. The film is tuned to increase sensitivity of an infrared detector (100) by increasing density of bundled carbon nanotubes in the film to increase thermal coefficient of resistance by 4 degree Celsius with Noise Equivalent Delta Temperature about 10 mK. USE - Bundled nanotube graphene based microbolometer e.g. UV sensor, infrared sensor and terahertz photo/radiation sensor, for sensing or detecting light or electromagnetic radiation in an optoelectronic circuit and a display. ADVANTAGE - The microbolometer comprises a detection circuit that provides electrical outputs for sufficient light detection from a nanotube article in proximity of a predefined region by preamplification, so that elimination of Nyquist limited behavior can be achieved, thus improving the performance of the microbolometer, and enhancing overall sensitivity of the microbolometer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for tuning a graphene-based microbolometer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a microbolometer detecting element employing a graphene sensing element fabricated on a generic complementary metal-oxide semiconductor wafer. Infrared detector (100) P-N junction substrate (101) Complementary metal-oxide semiconductor logic (110) Thin graphene film (120) Graphene nanoribbon Infrared sensors (130)