▎ 摘　　要

NOVELTY - Producing non-catalytic substrate growing graphene, comprises (a-i) providing a substrate, (a-ii) supplying carbon-containing gas on substrate, and performing low-pressure chemical vapor deposition, and (a-iii) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate by heteroepitaxially of Van der Waals type, and does not has a catalyst layer; or (b-i) providing a substrate, (b-ii) supplying carbon-containing gas on substrate, and performing low-pressure chemical vapor deposition, and (b-iii) adsorbing and diffusing hydrocarbon radicals to grow graphene on substrate. USE - The non-catalytic substrate growing graphene is useful for producing electronic component of electronic device, and processing platforms (all claimed). DETAILED DESCRIPTION - Producing non-catalytic substrate growing graphene, comprises either (a-i) providing a substrate, (a-ii) supplying carbon-containing gas on the substrate, and performing low-pressure chemical vapor deposition, and (a-iii) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate by heteroepitaxially of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer,; (b-i) providing a substrate, (b-ii) supplying carbon-containing gas on the substrate, and performing low-pressure chemical vapor deposition, and (b-iii) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer; (c-i) loading the substrate into a deposition chamber, and forming the substrate layer on the substrate, (c-ii) loading the substrate in the low-pressure chemical vapor deposition chamber, supplying carbon-containing gas on the substrate, and performing low-pressure chemical vapor deposition (LPCVD) to produce non-catalytic substrate growing graphene, and (c-iii) sequentially loading the substrate load-locked chamber in the deposition chamber and LPCVD chamber; (d-i) loading the substrate in the deposition chamber to produce substrate layer, (d-ii) optionally etching the substrate layer, (d-iii) loading the substrate in the LPCVD chamber, supplying carbon-containing gas on the substrate to produce non-catalytic substrate growing graphene; (e-i) loading the substrate in the deposition chamber to produce substrate layer, (e-ii) loading the substrate into CMP chamber, and performing CMP process to produce substrate on the substrate, and (e-iii) loading substrate into LPCVD chamber, supplying carbon-containing gas on the substrate to produce non-catalytic substrate growing graphene; (f-i) loading the substrate in the deposition chamber to produce substrate layer, (f-ii) loading the substrate into CMP chamber, and performing CMP process to produce substrate on the substrate, and (f-iii) etching the substrate, and (f-iv) loading the substrate into LPCVD chamber, and supplying gas containing carbon to produce non-catalytic substrate growing graphene; (g-i) forming a substrate layer on a substrate, (g-ii) uniformly distributing concentration of gas containing carbon on the substrate layer, (g-iii) performing an LPCVD, and (g-iv) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate having heteroepitaxial growth of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer; (h-i) forming a substrate layer on a substrate, (h-ii) increasing concentration of the gas containing carbon on particular area of the substrate layer, (h-iii) performing LPCVD, (h-iv) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate having heteroepitaxial growth of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer, (h-v) growing graphene in parallel to particular areas of the substrate layer, and (h-vi) forming a large crystals of graphene; (i-i) forming a substrate layer on a substrate, (i-ii) equalizing the density distribution of the gas containing carbon on the substrate layer, (i-iii) performing LPCVD, (i-iv) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer; (j-i) forming a substrate layer on a substrate, (j-ii) increasing carbon containing gas on particular area of the substrate layer, (j-iii) performing LPCVD, and (j-iv) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer, (j-v) growing graphene in parallel to particular areas of the substrate layer, and (j-vi) forming a large crystals of graphene; growing graphene in second direction in parallel on surface from the linear graphene, and growing graphene in substrate in absence of a catalyst; or (k-i) injecting carbon-containing gas, (k-ii) performing low-pressure chemical vapor deposition, and (k-iii) adsorbing and diffusing hydrocarbon radicals to grow graphene on the substrate having heteroepitaxial growth of Van der Waals type which is generated by nuclear on surface of the substrate, and does not has a catalyst layer. INDEPENDENT CLAIMS are also included for: (1) non-catalytic substrate growing graphene direct contacted to surface of the substrate, and having greater grain size in parallel to surface of substrate growing graphene in absence of the catalyst, a crystal grain boundary in accordance the first parallel direction to the surface, and the second parallel direction to the surface, an interior area enclosed by the grain boundaries of the single crystal, multiple grain boundaries according to first direction parallel to the surface, multiple grain boundaries according to the second direction parallel to the surface, one single crystal in inside respective regions surrounded by the grain boundaries; (2) non-catalytic substrate growing graphene manufacturing equipment comprising a gas supplying unit for supplying carbon-containing gas, a gas injection part for injecting carbon-containing gas, a substrate having a substrate layer disposed in contact with carbon-containing gas, and a heating device for heating local area of the substrate containing the substrate layer; and (3) gas spout comprising the storage unit, the heating unit, and the piezoelectric injection system, or a solenoid injection system for injecting carbon-containing gas.