▎ 摘　　要

NOVELTY - The method involves growing a hydrogen-boron nitride film to manufacture a hydrogen-boron nitride surface sample by performing photoresist on a preset substrate. The hydrogen-boron nitride surface sample is transferred by a thermal release tape after removing the preset substrate. The thermal release tape is removed to obtain graphene samples. Graphene sample etching process is performed. A source electrode, a drain electrode and a grid electrode on a graphene surface are manufactured to obtain a graphene encapsulated transistor. USE - Graphene encapsulated thin film transistor manufacturing method. ADVANTAGE - The method enables manufacturing the source electrode and the drain electrode in a horizontal plane electrode contact so as to reduce contact resistance and preparation difficulty of the graphene encapsulated transistor, thus improving finished product rate. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene encapsulated thin film transistor manufacturing method. '(Drawing includes non-English language text)'