▎ 摘　　要

NOVELTY - A variable resistance element comprises graphene layer (33), and a eutectic alloy layer in contact with the graphene layer. USE - Variable resistance element used in semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of variable resistance element. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional of the variable resistance element. (Drawing includes non-English language text) Lower wiring (10) Upper wiring (20) Metal layers (31,35) Eutectic-alloy layers (32,34) Graphene layer (33)